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This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate... Morethese semiconductor devices. Table of contents : Preface Introduction Part I: Semiconductor Physics · Energy Bands and Carrier Concentration in Thermal Equilibrium · Carrier Transport Phenomena Part II: Semiconductor Devices · p-n Junction · Bipolar Transistor and Related Devices · MOSFET and Related Devices · MESFET and Related Devices · Microwave Diodes, Quantum-Effect, and Hot-Electron Devices · Photonic Devices Part III Semiconductor Technology · Crystal Growth and Epitaxy · Film Formation · Lithography and Etching · Impurity Doping · Integrated Devices Appendix A: List of Symbols Appendix B: International Systems of Units (SI Units) Appendix C: Unit Prefixes Appendix D: Greek Alphabet Appendix E: Physical Constants Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K Appendix G: Properties of Si and Gaas at 300 K Appendix H: Derivation of the Density of States in Semiconductor Appendix I: Derivation of Recombination Rate for Indirect Recombination Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode Appendix K: Basic Kinetic Theory of Gases Appendix L: Answers to Selected Problems Index Market Description : · Electrical Engineers · Scientists About Author : S. M. Sze is UMC Chair Professor of the National Chiao Tung University and President of the National Nano Device Laboratories, Taiwan, R.O.C. For many years he was a member of the technical staff at Bell Laboratories. Professor Sze is the co-inventor of the nonvolatile semiconductor memory. He has written numerous texts on device physics, including PHYSICS OF SEMICONDUCTOR DEVICES, considered a reference classic. In 1991, he received the IEEE J. J. Ebers award for his "fundamental and pioneering contributions..." He received his PhD in solid-state electronic from Stanford University in 1963 ISBN 9788126516810
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